PART |
Description |
Maker |
2SC3240 |
MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
QM10HB-2H |
MITSUBISHI TRANSISTOR MODULES DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
|
2SC3379 |
MITSUBISHI RF POWER TRANSISTOR
|
Mitsubishi Electric Corporation
|
2SC2627 |
MITSUBISHI RF POWER TRANSISTOR
|
Mitsubishi Electric Corporation
|
2SC2094 |
MITSUBISHI RF POWER TRANSISTOR
|
Mitsubishi Electric Corporation
|
QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
QM50E3Y-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM50E3Y-H QM50E2Y-H QM50E2Y |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
QM75DY-2HB |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM30E3Y-H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QM400HA-2H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|